YADAV, SARISH and . Ji, KRISHNA and SHARMA, S. K. and SHUKLA, R. K. and KUMAR, A. (2015) EFFECT OF EXPOSURE OF LIGHT ON DENSITY OF DEFECT STATE IN Se96Bi4 GLASSY ALLOYS. Journal of Applied Physical Science International, 4 (1). pp. 1-7.
Full text not available from this repository.Abstract
Amorphous thin films of Se96Bi4 glassy alloy are prepared by vacuum evaporation technique. Space charge limited currents are measured at various fixed temperatures before and after exposure to white light of intensity 990 lux in a vacuum of 10-2 Torr. Using the theory of space charge limited conduction (SCLC), the density of localized states (DOS) has been calculated after each exposure of light (exposure time 1 -5 hours). The results indicate that DOS increases with the time of light exposure indicating the creation of light induced defects due to exposure of light.`
| Item Type: | Article |
|---|---|
| Subjects: | Lib Research Guardians > Physics and Astronomy |
| Depositing User: | Unnamed user with email support@lib.researchguardians.com |
| Date Deposited: | 26 Dec 2023 08:07 |
| Last Modified: | 20 Jul 2024 05:35 |
| URI: | http://eprints.classicrepository.com/id/eprint/2478 |
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